 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13004 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 600 300 9 4 8 2 4 UNIT V V V A A A A W Open collector Base current Base current-PeaK Ta=25ae Total power dissipation TC=25ae Junction temperature Storage temperature 2 75 150 -65~150 ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1A; IB=0.2A IC=2A; IB=0.5A IC=4A;IB=1A IC=1A; IB=0.2A IC=2A ;IB=0.5A VCEV=600V; VBE=1.5V TC=100ae VEB=9V; IC=0 IC=1A ; VCE=5V MIN 300 MJE13004 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.5 0.6 1.0 1.2 1.6 1.0 5.0 V V V V V mA mA DC current gain Switching times td tr ts tf CHA IN Transition frequency Delay time Rise time Storage time Fall time Collector outoput capacitance E SEM NG IC=2A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz IE=0; f=1MHz ; VCB=10V OND IC TOR UC 10 8 60 40 4 65 1.0 MHz pF 0.1 0.7 1% 4.0 0.9 |I |I |I |I s s s s VCC=125V ,IC=2A IB1=-IB2=0.4A tp=25|I s;duty cycleU 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE13004 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
Price & Availability of MJE13004
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |